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Transistors
2SC4691J
Silicon NPN epitaxial planar type
Unit: mm
1.60+0.05 -0.03 1.000.05
0.800.05
For high speed switching Features
* High-speed switching * Low collector to emitter saturation voltage VCE(sat) * SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.12+0.03 -0.01
3
1.600.05 0.85+0.05 -0.03 (0.375)
1 0.270.02
2
(0.80)
(0.50)(0.50)
0 to 0.02
Absolute Maximum Ratings Ta = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCES VEBO ICP IC PC Tj Tstg Rating 40 40 5 300 100 125 125 -55 to +125 Unit V V V mA mA mW C C
5
0.70+0.05 -0.03
5
1: Base 2: Emitter 3: Collector
EIAJ: SC-89 SSMini3-F1 Package
Marking Symbol: 2Y
Electrical Characteristics Ta = 25C 3C
Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Turn-on time Turn-off time Storage time Note) *: hFE rank classification Rank hFE Q 60 to 120 R 90 to 200 No rank 60 to 200 Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton toff tstg Conditions VCB = 40 V, IE = 0 VEB = 4 V, IC = 0 VCE = 1 V, IC = 10 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCB = 10 V, IE = -10 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz Refer to the measurement circuit 450 2 17 17 10 6 60 0.17 Min Typ Max 0.1 0.1 200 0.25 1.0 V V MHz pF ns ns ns Unit A A
0.10 max.
Publication date: June 2002
SJC00282AED
1
2SC4691J
Switching time measurement circuit
ton , toff Test Circuit
220 Vin = 10 V 3.3 k 50 3.3 k Vbb = -3 V 0.1 F Vout A 50 VCC = 3 V Vin = 10 V 0.1 F 50 910 500 500 Vbb = 2 V 1 k 90 VCC = 10 V
tstg Test Circuit
0.1 F Vout
10% Vin 10% 90% Vout 90% ton toff Vout tstg Vin
10%
10%
(Waveform at A)
PC Ta
150
IC VCE
250 Ta = 25C IB = 8 mA 200
VCE(sat) IC
1
125
100
Collector current IC (mA)
7 mA 6 mA 5 mA 4 mA 3 mA 2 mA
Collector to emitter saturation voltage VCE(sat) (V)
IC / IB = 10
Collector power dissipation PC (mW)
Ta = 75C
150
-25C 0.1 25C
75
100 1 mA 50
50
25
0
0
0 25 50 75 100 125 150
0
1
2
3
4
5
6
0.01 0.1
1
10
100
1 000
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Collector current IC (mA)
VBE(sat) IC
10 IC / IB = 10
hFE IC
160 140 Ta = 75C 120 VCE = 1 V 100
Cob VCB
Collector output capacitance Cob (pF)
f = 1 MHz Ta = 25C
Base to emitter saturation voltage VBE(sat) (V)
DC current gain hFE
100 80 60 40 20
25C
10
1
-25C Ta = 75C 25C
-25C
1
0.1 0.1
1
10
100
0 0.1
0.1 1 10 100 1 000
0
5
10
15
20
25
30
35
Collector current IC (mA)
Collector current IC (mA)
Collector to base voltage VCB (V)
2
SJC00282AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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